Промышленный модуль оперативной памяти DDR4 ECC SO-DIMM 8GB 2133MT/s Sorting Wide Temperature
JEDEC standard 1.2V(1.26V~1.14V) Power Supply JEDEC Standard 260-pin Dual In-Line Memory Module 8 bit pre-fetch On Die Termination with ODT pin Bi-directional Differential Data Strobe Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C Gold Finger 30μ" RoHS Compliant
Память |
Тип |
DDR4 |
Объем |
8GB |
Стандарт |
ECC SO-DIMM |
Частота |
2133MT/s |
Function |
Non-ECC Unbuffer Memory |
Series |
Wide Temperature |
Data Rate |
2133 MT/s, 2400 MT/s |
Pin Number |
260pin |
Width |
64Bits |
Питание |
Voltage |
1.2V |
Конструктив |
Назначение |
Sorting Wide Temperature |
Module Type |
DDR4 SODIMM |
IC Organization |
512Mx8 |
IC Brand |
Samsung |
Ряд |
2 |
Сторон |
2 |
PCB Height |
1.18 Inches |
Operation Temperature |
-40°C ~ +85°C |
Capacity |
4GB, 8GB, 16GB |
Примечание |
Non fixed die |
Описание
Промышленный модуль оперативной памяти DDR4 ECC SO-DIMM 8GB 2133MT/s Sorting Wide Temperature
JEDEC standard 1.2V(1.26V~1.14V) Power Supply JEDEC Standard 260-pin Dual In-Line Memory Module 8 bit pre-fetch On Die Termination with ODT pin Bi-directional Differential Data Strobe Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C Gold Finger 30μ" RoHS Compliant
Характеристики
Память |
Тип |
DDR4 |
Объем |
8GB |
Стандарт |
ECC SO-DIMM |
Частота |
2133MT/s |
Function |
Non-ECC Unbuffer Memory |
Series |
Wide Temperature |
Data Rate |
2133 MT/s, 2400 MT/s |
Pin Number |
260pin |
Width |
64Bits |
Питание |
Voltage |
1.2V |
Конструктив |
Назначение |
Sorting Wide Temperature |
Module Type |
DDR4 SODIMM |
IC Organization |
512Mx8 |
IC Brand |
Samsung |
Ряд |
2 |
Сторон |
2 |
PCB Height |
1.18 Inches |
Operation Temperature |
-40°C ~ +85°C |
Capacity |
4GB, 8GB, 16GB |
Примечание |
Non fixed die |