Промышленный модуль оперативной памяти DDR2 U-DIMM VLP 1GB 667MT/s Low-Profile
JEDEC standard 1.8V +/- 0.1V Power Supply JEDEC Standard 240-pin 4 bit pre-fetch OCD (Off-Chip Driver Impedance Adjustment) Programmable Burst Length 4 / 8 with both sequential and interleave mode Auto refresh and self refresh supported Low profile of PCB Gold Finger 3μ" RoHS Compliant
Память |
Тип |
DDR2 |
Объем |
1GB |
Стандарт |
U-DIMM VLP |
Частота |
667MT/s |
Function |
Non-ECC Unbuffer Memory |
Series |
Very Low-Profile (VLP) |
Data Rate |
400 MT/s, 533 MT/s, 667 MT/s, 800 MT/s |
Pin Number |
240pin |
Width |
64Bits |
Питание |
Voltage |
1.8V |
Конструктив |
Назначение |
Low-Profile |
Module Type |
DDR2 LONG DIMM |
IC Organization |
128Mx8 |
IC Brand |
Samsung |
Ряд |
1 |
Сторон |
1 |
PCB Height |
0.72 Inch |
Operation Temperature |
0°C ~ +85°C |
Capacity |
1GB, 2GB |
Примечание |
Sampling |
Описание
Промышленный модуль оперативной памяти DDR2 U-DIMM VLP 1GB 667MT/s Low-Profile
JEDEC standard 1.8V +/- 0.1V Power Supply JEDEC Standard 240-pin 4 bit pre-fetch OCD (Off-Chip Driver Impedance Adjustment) Programmable Burst Length 4 / 8 with both sequential and interleave mode Auto refresh and self refresh supported Low profile of PCB Gold Finger 3μ" RoHS Compliant
Характеристики
Память |
Тип |
DDR2 |
Объем |
1GB |
Стандарт |
U-DIMM VLP |
Частота |
667MT/s |
Function |
Non-ECC Unbuffer Memory |
Series |
Very Low-Profile (VLP) |
Data Rate |
400 MT/s, 533 MT/s, 667 MT/s, 800 MT/s |
Pin Number |
240pin |
Width |
64Bits |
Питание |
Voltage |
1.8V |
Конструктив |
Назначение |
Low-Profile |
Module Type |
DDR2 LONG DIMM |
IC Organization |
128Mx8 |
IC Brand |
Samsung |
Ряд |
1 |
Сторон |
1 |
PCB Height |
0.72 Inch |
Operation Temperature |
0°C ~ +85°C |
Capacity |
1GB, 2GB |
Примечание |
Sampling |